2N2222 транзистор характеристики и его российские аналоги

2N2222 транзистор характеристики и его российские аналоги

Биполярный транзистор 2N2222 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N2222

Тип материала: Si

Максимальная рассеиваемая мощность (Pc): 0.5 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.8 A

Предельная температура PN-перехода (Tj): 175 °C

Граничная частота коэффициента передачи тока (ft): 250 MHz

Ёмкость коллекторного перехода (Cc): 8 pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: TO18

2N2222 Datasheet (PDF)

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 • High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VE

2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet — production data Features Parameter ESCC JANS 1 2 BVCEO min 40 V 50 V 3 IC (max) 0.8 A TO-18 3 3 hFE at 10 V — 150 mA 100 4 1 1 2 2 • Hermetic packages LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid. • Up to 100 krad(Si) low dose ratee Description Figure 1. Internal schematic

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 • High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VE

P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb—Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25°C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector—Emitter Voltage VCEO 40 Vdc Collector—Base Voltage VCBO 75 Vdc 3 Emitter—Base Voltage VEBO 6.0 Vdc EMITTER Collector Current — Continuous IC 600 mAdc Total Devi

SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C • High Speed Saturated Switching • Hermetic LCC3 Ceramic package. • Variant B to MIL-PRF-19500/255 outline • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Bas

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SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C • High Speed Saturated Switching • Hermetic LCC3 Ceramic package. • Variant B to MIL-PRF-19500/255 outline • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Bas

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM – 3K Rads (Si) 2N2221A 2N2222A JANSD – 10K Rads (Si) 2N2221AL 2N2222AL JANSP – 30K Rads (Si) 2N2221AUA 2N2222AUA

SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C • High Speed Saturated Switching • Hermetic LCC3 Ceramic package. • Variant B to MIL-PRF-19500/255 outline • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Bas

1.9. mtp2n2222a.pdf Size:238K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector�Emitter Voltage VCEO 40 Vdc 3 Collector�Base Voltage VCBO 75 Vdc CASE 29�04, STYLE 17 Emitter�Base Voltage VEBO 6.0 Vdc TO�92 (TO�226AA) Collector Current � Continuous IC 600 mAdc

1.10. p2n2222a.pdf Size:238K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector�Emitter Voltage VCEO 40 Vdc 3 Collector�Base Voltage VCBO 75 Vdc CASE 29�04, STYLE 17 Emitter�Base Voltage VEBO 6.0 Vdc TO�92 (TO�226AA) Collector Current � Continuous IC 600 mAdc

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors 1997 May 29 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING � High current (max. 800 mA) PIN DESCRIPTION � Low voltage (max. 40 V). 1 emitter 2 ba

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2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are sili- con planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of col

2N2219A 2N2222A � HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage cur

2N2219A 2N2222A � HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage cur

DATA SHEET 2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25�C) SYMBOL UNITS Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO

MCC 2N2222 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2N2222A Phone: (818) 701-4933 Fax: (818) 701-4939 Features � High current (max.800mA) � Low voltage (max.40V) NPN Switching � Lead Free Finish/RoHS Compliant(Note 1) («P» Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol Ra

1.17. p2n2222a-d.pdf Size:164K _onsemi

P2N2222A Amplifier Transistors NPN Silicon Features � These are Pb—Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25�C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector—Emitter Voltage VCEO 40 Vdc Collector—Base Voltage VCBO 75 Vdc 3 Emitter—Base Voltage VEBO 6.0 Vdc EMITTER Collector Current — Continuous IC 600 mAdc Total Device Dis

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1.18. 2n2222aub.pdf Size:250K _optek

Product Bulletin JANTX, JANTXV, 2N2222AUB September 1996 Surface Mount NPN General Purpose Transistor Type JANTX, JANTXV, 2N2222AUB Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V �Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . .

1.19. 2n2222aua.pdf Size:186K _optek

1.20. p2n2222 a.pdf Size:240K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222 P2N2222A EBC TO-92 Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL 2222 2222A UNIT Collecto

1.21. 2n2222au.pdf Size:326K _first_silicon

SEMICONDUCTOR 2N2222AU TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-323/SC-70 package which 3 is designed for low power surface mount applications. Features 1 2 compliance with RoHS requirements. • We declare that the material of product SC-70 / SOT– 323 ORDERING INFO

1.22. 2n2222ae.pdf Size:462K _first_silicon

SEMICONDUCTOR 2N2222AE TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier 3 applications. They are housed in the SC-89 package which is designed for low power surface mount applications. 1 Features 2 compliance with RoHS requirements. • We declare that the material of product SC-89 ORDERING INFORMATION COLLECTOR

1.23. 2n2222as.pdf Size:446K _first_silicon

SEMICONDUCTOR 2N2222AS TECHNICAL DATA General Purpose Transistor NPN Silicon 3 compliance with RoHS requirements. • We declare that the material of product 2 1 ORDERING INFORMATION † SOT–23 Device Maring Shipping 2N2222AS 1P 3000 / Tape & Reel COLLECTOR 3 1 MAXIMUM RATINGS (TA = 25°C) BASE Rating Symbol Max Unit 2 Collector-Emitter Voltage VCEO 40 Vdc EMITTER Col

Radiation Hardened NPN Silicon Switching Transistors 2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB 2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUB Features • Qualified to MIL-PRF-19500/255 • Levels: Commerical JANS JANSM-3K Rads (Si) JANSD-l0K Rads (Si) JANSP-30K Rads (Si) JANSL-50K Rads (Si) JANSR-l00K Rads (Si) • TO-18 (TO-206AA), Surface mount UA & UB Packages Absolute Maximum Ra

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